Ultra Wideband GaN MMIC Power Amplifier

Due to the increased demand of higher date rate transfer and therefore bandwidth,the development of new solutions for broad-band RF Power Amplifiers(PAs)for mobile communications has become more and more interesting in recent years.Broadband microwave amplifiers are one of the key components that are employed in electronic warfare,radar,high-data-rate fiber-optic communication,and broadband instrumentation systems.Since a highelectron mobility gallium nitride(GaN)transistor exhibits high breakdown voltage and high power density,Power transistors based on GaN technology have many advantages in wideband power amplifier applications.On this basis,the design of GaN technology(SiC substrate,Si substrate,diamond substrate)and GaN-based power amplifiers(ultra-wideband,high-efficiency)has gradually become a hot topic at home and abroad in recent years.Due to the high cost of traditional SiC-based GaN processes,Si-based GaN processes have been developed to save costs The design of an ultra-wideband power amplifier is inherently difficult.The gain-roll-off effect of the transistor under broadband is significant,and there is a natural contradiction between the broadband matching effect and the matching bandwidth.To solve the problem of ultra-wideband amplifier design,this article mainly carried out the following two tasks:1.In order to solve the problem of gain roll-off in the wide-band range of transistors,a gain-balanced design method was proposed in the design process,and the wideband high-efficiency performance can achieved by compensating transistor gain roll-off and output matching low-loss simplification.Finally,a 2-6GHz wideband power amplifier was designed and manufactured based on the 0.25 ?m SiC-based GaN process of Taiwan WIN Company,The device simulation model is a self-built nonlinear large-signal model.Test data shows that the designed power amplifier has more than 35.7dBm output power,19.7±0.7dB gain,and over 45% power added efficiency in 2-6GHz continuous wave test,This is also the highest level in related reports.The consistency of simulation and test results is good,indicating that this design method is of great help to broadband design.2.To Solve the Difficulties of Large Impedance Transform Ratio Design for Wideband High Power Amplifiers,this paper starts with the device load traction,adopts a typical three-level reactance matching topology,and Comprehensive optimization of multi-level three-level matching networks and fusion of tree-shaped power synthesis distribution structures.a 10 W 6-18 GHz wideband power amplifier was designed and manufactured based on the 0.1?m Si-based GaN process of OMMIC,France.The simulation results show that the power amplifier designed based on the above technical means achieves 10 W output power in the 6-18 GHz bandwidth,20±1dB gain,and 27% power-added efficiency.