Research On Peripheral Circuit Of RRAM

With the development of portable devices such as mobile phone, mobilecomputer and other equipments, Integrated Circuit industry gets a great developmentopportunity that never happened before. Due to the recent development, electronicproducts play a more and more important role because they brin g a lot of convenienceto people’s life and work. But the portable electronic product volume and duration hasbeen a bottleneck restricting the further development of them. Because the storageand transmission of information is the main function of the ele ctronic products, theyrequire not only low power consumption but also high density of memory whichbrings new challenges to memory technology. This dissertation is supported bynational "863" high technology research and development program, It discusses andstudies new developed Resistor Random Access Memory(RRAM).By comparing the advantages and disadvantages of several modern main streammodels of non volatile memory, a new memory technology called RRAM that haswide application prospect is researched in this dissertation. It enhances the reliabilityof RRAM peripheral circuits by improving voltage and power characters. Thisdissertation makes a deep study about RRAM memory technology as well as it’speripheral circuits combining with the latest domestic and foreign research.First of all, the basic principle, architecture and read-write mechanism of RRAMare introduced in detail. According to the characteristics of RRAM, its key modules ofperipheral circuit are designed and optimized, which including writing circuit, Verifycircuit, amplifier and bandgap reference circuit. Because in a memory chip, overallarea is directly determined by the memory cell. In this design, the same source lineare shared by near two memory units so the chip area is reduced nearly50%; A newverify circuit is designed to determine suitable write voltage which reduces thepossibility of RRAM write error. To determines the suitable write voltage, A newverify circuit is designed to determine suitable write voltage which reduces thepossibility of RRAM write error. Considering the single ended readout characteristics,a single ended amplifier structure is designed basing on the feature of readout circuitwhich increases its stability; A low voltage, low power and high stability of bandgapreference circuit is designed, so that the whole chip can work in low supply voltage.Finally, According to on the layout design rules, the whole layout of RRAM is designed successfully.