Design Of Bandgap Reference Source Chip Based On 28nm Advanced Technology

With the development of semiconductor Process and circuits design technology, Analog integrated circuit improved greatly in recent years. There is challenge to the Performance of circuits. Also with the Popular use of electronic system Powered by battery, the request for the functions of the analog Integrated - Circuit is much higher.Bandgap reference voltages are important analog circuit blocks.It can Provide a nearly constant reference voltages which is stabilized over Process、Power supply and temperature variation. It makes the bandgap reference voltage be used extensively in Analog to Digital Converter (A/DC). Digital to Analog Converter(D/AC), Power management circuits and memories.At the same time, bandgap reference voltage is simple in structure and more reliable, it could be implemented in standard CMOS Process, so it’s suitable for mass Production.At Present, the bandgap reference voltage has been the most Popular reference voltage generator in CMOS integrated circuits.This paper describes the design and implementation of a low power, low voltage and high resolution band-gap reference circuit under the TSMC 28nm CMOS process. In the circuit, a high gain amplifier is designed in order to get the desired accuracy of band-gap reference circuit and to eliminate the effect of offset voltage and low frequency noise. In the layout design, we have considered such problems as the matching between the devices, noise coupling, parasitic effect, and so on. The band-gap reference circuit has successfully taped out on the TSMC 28nm CMOS process. The power supply is from 1.6V to 2. OV, and the power dissipation is less than 150uW. When the temperature varies fromO℃ to 125℃, the temperature coefficient is less than 10ppm/℃, the output voltage is fixed from 1.24v to 1.25v. The power supply rejection is higher than 55dB.