The Analysis And Design Of Higher Order Temperature Compensation Cmos Bandgap Reference

Bandgap reference can not be ignored position as a basic and key unit module in analog circuit. The high-performance bandgap reference source is the focus of the study. The so-called high-performance bandgap reference source includes many aspects of performance indicators. For example, Bandgap reference source of low temperature coefficient makes the output of the reference source along with the change of the temperature decrease. Bandgap reference of high power supply rejection ratio has a strong anti-jamming capability. Reference source output of small line regulation bandgap reference changes less affected with the change of the supply voltage on the reference source. Only design a good performance of bandgap reference source can we ensure the good performance of the overall circuit. Given the importance of the bandgap reference, we have embarked on this subject, design and research of the high-performance bandgap reference. This paper aims to design power management module for the A/D converter, D/A converter and LDO low dropout linear regulator with low temperature coefficient and high power supply rejection ratio of bandgap reference.With this aim, we design a first-order temperature compensation bandgap reference. The simulation result of the circuit with a self-biased folding cascode two levels of opamps has been the high open-loop gain and the wide output voltage swing. The core circuit adds the PNP which is used to reduce the impact of the offset voltage and PMOS which is used to increase the power supply rejection ratio of circuit on the base of the kujik structure. Adding resistance in the start circuit can contribute the overall circuit to start their own more easier. The circuit adopts HSPICE with TSMC0.35μm CMOS process to simulate with a supply voltage of3.3V. The results shows that the temperature coefficient is11.81ppm/℃with the temperature in the range of-25℃～125℃, the power supply rejection ratio is94dB and there is a16μS start time.The line regulation is0.35mV/V when the power supply voltage is3V to5V.For deficiencies of the first-order temperature compensation bandgap reference, it uses three high-order temperature compensation circuits which are all compatible with standard CMOS process. There are IPTAT2second-order temperature compensation method, the index curvature temperature compensation method and sub-threshold region curvature temperature compensation method. This three high-order temperature compensation bandgap reference adopt HSPICE with TSMC0.35μm CMOS process to simulate.With a supply voltage of3.3V, the temperature coefficients are2.72ppm/℃;5.93ppm/℃;3.79ppm/℃with the temperature in the range of-25℃～125℃. Power supply rejection ratio are96dB,88dB,85dB. Start-up time are5μS,6μS,6μS. The results show that the three bandgap reference source are able to meet the performance requirements in the power management module.