Research On Insulation And Stress In Oxidation Layer Of Silicon Microchannel Array

Silicon micro-channel is widely used in the field of low light level night vision, photomultiplier tubes, X-ray enhancer and so on.In order to meet the requirement of microchannel plate electron multiplier, we used the method of thermal oxidation to produce an thin film of silicon dioxide which could play a role in electric insulation. Silicon dioxide film has a high breakdown voltage, It can satisfy the high breakdown voltage requirements of electron multiplier. We should find the reasonable parameter values and preparation process in the oxidation so that the thickness and breakdown voltage dioxide of the silicon dioxide insulating layer would meet requirement. This article has been focused on researching and analyzing of the problem of oxide insulation and thermal stress in the process of production of silicon dioxide film. In this experiment, dry oxygen and wet oxygen were carryed out respectively for8hours. The thickness of dry oxygen silicon dioxide films was458nm and wet oxygen silicon dioxide films was1.4μm.The wet oxygen oxidation under the condition of48hours, meanwhile the insulating layer’s breakdown voltage was greater than1000VBy using ANSYS finite element software, silicon microchannel silicon dioxide insulating stress distribution in the main area. The higher thermal stress area was spread over Si-SiO2interface, By simulate conditions silicon microchannel sample was selected for simulation analysis at1100℃, we got the maximum equivalent thermal stress of420.639MPa. The annealing experiment surface of silicon dioxide insulating layer breakdown voltage distribution evenly.