High Temperature Oxidation And Shaping Technology Of Silicon Microchannel Array

Based on the oxidation mechanism of silicon microchannel array, wet-oxygen oxidation is conducted on the silicon microchannel array of n type <100> crystalline; observation can be made with scanning electrical microscope to the appearance of channel with wet-oxygen channel, and the thickness of channel wall become 2.87?m to 1.82?m before oxidation, and the diameter of the channel also reduced accordingly. The relation curve of the oxide thickness with time changing could be achieved by the analysis of Deal-Grove model on the oxide thickness with time passing by.There occurred volume expansion in the process of oxidation under the two-dimensional structure. With the generation of thermal stress, the outside corner of channel bulged obviously, which speed up the reaction of oxidation. The points outside appear sharp shape and the edges become sophisticated. Interior corner edge contracted inward and became smooth due to the expansion of volume. As the contraction inside of the interior corner edge hindered the growth of internal corners, the speed of growth of the interior corner oxidation reduced, and there appears sharp shape at the interior corner after oxidation.The value of interior and exterior corners thermal stress and its displacement has been reflected directly from the thermal stress cloud chart by using the Abaqus finite element software to simulate the thermal stress distribution of the structure of single-hole silicon micro channel. The max thermal stress of exterior has reached 1036N/m2, while the max value of interior has reached 941N/m2. With the increasing of temperature and the thermal stress, stress value of exterior became negative and the form of stress. The change of exterior corner edge is bigger than the interior. The thermal stress of interior is set constant 941 N/m2. The exterior corner of the whole channel has max displacement which already reached 5.4 nm. While interior displacement is relatively smaller, which reached 5.063 nm. The exterior corner oxidation layer grew much faster than the interior.The change of displacement of exterior edge is bigger than the change of interior, and the value of interior displacement is constant 5.063 nm. But it shows different between exterior edge and the interior edge, with arc shape for exterior edge toward outside and bowed shape of interior edge toward inside.Si-MCP will appear warping phenomenon after thick layer insulated and oxide, due to the special hole-array structure of micro channel, high temperature plastic could be used to make the silicon wafer flat. At the temperature of 1250?, weight could reach 450 g, high temperature plastic for 4h could help flat level to be 0.1, which could get best effect.