Study On Thick Layer Oxidation Technongy Of Silicon Microchannel Array

In recent years,making advanced silicon microchannel plate by using silicon as the raw materials has become a hot research topic in China.Compared with traditional microchannel plate,silicon micro-channel plate has the characteristics of smaller aperture,smaller noise factor,higher gain,longevous,etc.Also,silicon microchannel plate is widely used,not only in the mass spectrometer,but in X-ray photo-electron spectrometer,Auger electron spectrometer and other instruments.This thesis mainly composes of the research on the oxidation kinetics of silicon microchannel arrays,which is based on the thick-layer-oxidation mechanism of silicon microchannel array.The wet oxygen oxidation rate in the oxidation furnace and water bath cauldron at different temperatures was analyzed.Therefore the oxidation rate diagram at different temperatures was obtained.The structures of silicon micro-channel arrays before and after the oxidation were compared and analyzed.The mechanism of deformation after oxidation at different temperatures was analyzed,as well as different thickness of substrate and various annealing methods.and the deformation trend of samples in different parameters after thick layer oxidation were concluded.The stress and strain in high temperature oxidation of silicon microchannel array were simulated by ANSYS simulation software,as well as the stress and strain distribution of silicon microchannel at different temperatures.Finally,the experimental design of constrained oxidation was provided and the problem of device warping deformation which was caused by high temperature oxidation was solved.In this thesis,the optimization of the preparation process of silicon micro-channel plate substrate was presented,in order to obtain a more complete and high-quality silicon micro-channel plate substrate and make full preparation for the subsequent processing.