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Research On Chemical Mechanical Polishing And Oxidation Insulation Technology For Silicon Microchannel Plate

Posted on:2015-02-17Degree:MasterType:Thesis
Country:ChinaCandidate:K X WuFull Text:PDF
GTID:2308330479998570Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
In recent years based on silicon micro channel plate become the domestic and foreign advanced the research hotspots, the high aspect ratio, high gain and low noise, high resolution, low power consumption and other characteristics are widely used in high sensitive ion detector, high sensitive sensor, X ray enhancement and LLL night vision imaging and other fields. At present, there is no domestic research institutions to complete the development of silicon micro channel plate electron multiplier. Through experimental study on silicon micro channel plate preparation process steps in the chemical mechanical polishing and oxidation is optimized and improved insulation technology, which include the following aspects:(1) By using the method of vacuum filling wax improved micro channel structure for chemical mechanical polishing process problems, through the optimization of experimental research on technology, and completed the silicon micro channel plate double CMP technology.(2) Study on the thermal oxidation of Si-MCP experiment device, the thick layer of oxide preparation conditions were optimized, and the preparation conditions of the breakdown voltage above 1000 V silicon micro channel plate sample matrix device.(3) Put forward the technological scheme of high temperature plastic, and through this method makes the Φ16 Si-MCP experiment sample warpage healing.
Keywords/Search Tags:Silicon microchannel plate, Chemical mechanical Polishing, Thermal oxidization, Breakdown voltage, Plastic deformation
PDF Full Text Request
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