Design And Research Of The Power Amplifier Applied In Monolithically Integrated RF Transceiver Module

In recent years, the rapid development and high demand of wireless communications, mobile terminal, satellite navigation, and various types of radar promote the rapid development of monolithic microwave integrated circuit (MMIC) and radio frequency integrated circuit (RFIC). The wireless communications transceiver applications systems gradually have the trends of low-cost, low power consumption and high integration. RF power amplifiers are the core module of the transmitter in the wireless communication system. The power amplifiers are directly connected with the performance of the entire communication system. In recent years, the research on monolithic integration of RF power amplifiers has become a hot spot.According to the design requirements of the pre-amplifier, which is used in the silicon-based monolithic phased array radar transceiver components, a monolithic two-stage power amplifier are designed in the paper. The two stages of the power amplifier are biased in class AB for good linearity. In order to achieve higher power-added efficiency, the conduction angle of the output stage is reduced, making it closer to B class.In this paper, the power amplifier circuit structures and the performance characteristics are analyzed in detail, and the linearization and efficiency enhancement technologies of the RF power amplifiers are discussed. Then the system structure of the two-stage S-band power amplifier is presented. And the whole design process is described in detail, including the choice of the transistors, design of bias circuit, analysis of stability, the load-pull and source-pull design, design of matching network and PA cascade. Finally, the simulation results are presented, and simple analysis of the efficiency and linearity are made.This amplifier is designed in TSMC0.35um SiGe-BiCMOS technology and simulated by Cadence Spectre RF. The simulation results show that the power amplifier achieves18.6dB power gain, the peak power added efficiency is39.16%, and the maximum output power reaches23.69dBm in the3GHz operating frequency. At the ldB compression point, the output power achieves19.97dBm, and the PAE reaches28.46%. And the IIP3achieves15.01dBm. The circuit voltage worked under3.3V power supply. The layout of the power amplifier is designed at last.