Design Of 1.6GHz Class-E Power Amplifier Based On SiGe Technology

Power amplifier, which is the last stage in a wireless transceiver system, it occupies a very important position in the overall system. And it is vital to improve the signal intensity, extend the using time, lower the power consume and reduce the volume and weight of the system. As the power amplifier itself consumes a large power and even occupies 60% of the power of the whole system, it is becoming a main trend to design a more efficient power recently.A two-stage class E power amplifier based on 0.18μm SiGe BiCMOS is designed in this thesis. In order to obtain a high swing signal to drive the class E, pseudo class E amplifier is designed for driver stage. To stand the high voltage in the drain of the output transistor, the cascode topology was utilized. For the purpose of a decent input VSWR, matching network was designed in the input stage. The main circuit is composed of a driver stage, an output stage and a load network. This paper presents the circuit design method of each module and the simulation results. Working with a 3.3 V supply, its operating band ranges from 1610MHz-1620MHz. Post-simulation results (TT process corner,27℃) show that the power amplifier can get a maximum output power of 26.6 dBm with an efficiency of 46.1% at 1.6GHz. The power gain is 20.6 dB and the input VSWR is 1.364.This designed power amplifier has correct functions and meets all the design specifications.