The Design Of Power Units And Power Amplifier Based On0.13μm SiGe Technology

As the core module of the wireless transceiver, the performance of RF poweramplifier affects various kinds of technical parameters of the transceiver in wirelesscommunication system. With the reduction of the technology feature size and thecontinuous increase of the working frequency, people demand increasingly high forthe parameters of the RF power amplifier, such as output power, power gain, linearity,efficiency and so on, which makes it difficult to design a power amplifier with highpower, high power gain, high linearity and high efficiency. In the formerly poweramplifier products, the GaAs devices have almost monopolized the markets.However，in recent years, the SiGe HBT devices and circuits design technology havegradually become a hot research. The SiGe HBT devices because of compatibilitywith the CMOS technology, easy integration, cheap price and three times heatdissipation compared to GaAS devices, rapidly take possession of the power amplifiermarkets at the small and medium power level and are developing toward the directionof replacing the GaAs devices as the mainstream power amplifier devices.On the basis of the detailed research on the power amplifier products at homeand abroad, based on0.13μm SiGe HBT technology, analyzed and designed the powerunits in detailed, including the selection of the power transistor and the optimizationof the parallel number, and focused on discussing the thermal design of the powertransistor. Completed the design of the power units for the three stage circuits andpower transistors layout used for Loadpull test. Advanced a three stage RF poweramplifier structure working in class AB. Designed the bias circuit for three stages,impedance matching network and ESD protection circuit, among which, the biascircuit played a part in temperature compensation and linearization at the same time.Used multiple structures of impedance matching network and got the optimum powertransmission performance. Finally, design a RF power amplifier chip applied forWLAN, Bluetooth and other application.Completed the test for the power amplifier chip on PCB, and got a goodperformance. At2.4GHz, S21was24.37dB, S11-10.79dB, S22-13.8dB and S12was-45.6dB. The maximum output power was23dBm, all of which meet the workingrequirements. The RF power amplifier can be used in WLAN, Bluetooth and othersmall and medium power field, and has a broad market prospect.