Key Technologies Research And Chip Design For Ku-Band Silicon-Based Phased Array Transmit/Receive Module

With the development of microwave and millimeter wave integrated circuit technology,active phased array radar technology is also developing.As the key component of phased array radar,the performance of T/R(transmit/receive)module directly affects the overall performance of phased array radar.In order to meet the development requirements of multi-function,high integration,high performance and low cost of phased array radar system,silicon-based semiconductor technologies such as CMOS and SiGe BiCMOS have been widely used in the design of T/R module circuit.Therefore,it is of great practical significance and application value to research and design the circuit in T/R module by using silicon-based technology.This dissertation is dedicated to the key technologies research and chip design for Ku band silicon-based phased array transceiver module.Based on 0.13?m SiGe BiCMOS process,this thesis completes chip designs verification of the 6-18 GHz broadband passive balun,the two types 12-18 GHz SPDT switches,the 15-17 GHz low-noise amplifier,the 14-16 GHz single-stage power amplifier,the 14-18 GHz two-stage power amplifier,the 12-17 GHz 6-bit digital control step attenuator,the 10-18 GHz 6-bit digital control active phase shifter,the 6-18 GHz 6-bit digital control active phase shifter and the 13-15 GHz silicon-based amplitude and phase control multi-functional system.Based on 0.13?m SiGe BiCMOS process,a hybrid EM simulation method for microwave and millimeter wave circuit design is proposed in this thesis.Based on the research and analysis of passive balun,a broadband passive balun chip with excellent amplitude balance and phase balance in the frequency range of 6-18 GHz is designed by using open stub compensation technology,which provides balun for the design of active phase shifter in the following chapter.The measured results show that:In the frequency range of 6-18 GHz,The amplitude unbalance and phase unbalance of the broadband passive balun are less than 1 dB and 2.2°.Based on 0.13?m SiGe BiCMOS process,using deep n-well NMOS nfettw_rf and dgnfettw_rf transistors,using series parallel circuit structure,combining substrate floating technology and LC resonance technology,two kinds of series parallel single pole double throw(SPDT)switch chips operating in the frequency range of 12-18 GHz are designed.The measured results show that:1.The insertion loss of the small linearity SPDT switch is less than 1.97dB,the switch isolation is greater than-29.5 dB,and the switch linearity is greater than 11.98 dBm;2.The insertion loss of the linearity adjustable SPDT switch is less than 2 dB,the switch isolation is greater than-37.5 dB,and the switch linearity is up to 26.8 dBm.Based on 0.13 ?m SiGe BiCMOS process and SiGe HBT transistors,a low noise amplifier(LNA)chip with on-chip temperature compensation circuit and ESD protection circuit is designed in the frequency range of 15-17 GHz.The measured results show that:In the 15-17 GHz frequency band,the gain S21 is 15.1?13.6 dB,the noise figure is 3.4?3.8 dB,the input port S11 is less than-9.1 dB,the output port S22 is less than-10.4 dB,and the input linearity IP-1dB is greater than-9.8 dBm.In this dissertation,based on 0.13 ?m SiGe BiCMOS process and SiGe HBT transistors,two power amplifier chips operating in Ku band are designed.The measured results show that:1.The single-stage power amplifier operates at 14-16 GHz,the gain S21 is 9.3?7.3 dB,the input port S11 is-8.4?-12.4 dB,the output port S22 is-5?-6.2 dB,the maximum output linearity OP-1dB can reach 17.83 dBm,the maximum power added efficiency PAE can reach 17.9%;2.The two-stage power amplifier operates at 14-18 GHz,the gain S21 is 22.4?26.9 dB,the input port S11 is-6.5?-20.7 dB,the output port S22 is-3.3?-7 dB,The maximum output linearity of OP-1dB is 21.43 dBm,and the maximum power added efficiency PAE is 18%.Based on 0.13?m SiGe BiCMOS process,this dissertation analyzes and studies the common attenuation unit circuit in the digital control step attenuator.On the basis of the research,a new capacitance compensation method is proposed,and a 6-bit digital control step attenuator chip operating at 12-17 GHz is designed.The measured results show that:In the frequency range of 12-17 GHz,the input port S11<-13 dB,the output port S22<-14 dB,the insertion loss is 6.99?9.33 dB,the maximum attenuation is 31.8?30.3 dB,the RMS amplitude error of attenuation is 0.58?0.36 dB,the RMS phase error of attenuation is 2.06°?3.46°,and the input linearity IP-1dB is 13.6?16.2 dBm.In this dissertation,based on 0.13?m SiGe BiCMOS process,two types 6-bit digital control active phase shifter chips are designed by using the vector modulation method using the circuit structure of two-stage RC polyphase filter and orthogonal all pass filter.Meanwhile,the circuit modules used in the active phase shifter are analyzed and introduced in detail.The measured results show that:1.10-18 GHz 6-bit digital control active phase shifter input port S11<-8.9 dB,output port S22<-11.5 dB,gain amplitude S21 is-10.1?-12.8 dB,RMS amplitude error is less than 1.1 dB,RMS phase error is 1.5°?3.7°,input linearity IP-1dB is 9.4-11.2 dBm under 0° phase-shifting state(reference state);2.6-18 GHz 6-bit digital control active phase shifter input port S11<-9.2 dB,the output port S22<-10.4 dB,the gain amplitude S21 is-1.85-0.95 dB,the RMS amplitude error is less than 1.04 dB,and the RMS phase error is less than 4.36°,input linearity IP-1dB is 5.4-8 dBm in the 0° phase-shifting state(reference state).Based on the 0.13?m SiGe BiCMOS process,a silicon-based amplitude and phase control multi-functional system chip operating at 13-15 GHz is designed in combination with the sub module circuits studied.The measured results show that:In the frequency range of 13.6?15.5 GHz,the receive chain gain is more than 7 dB,and the noise figure is 10.2?17.8 dB.In the frequency range of 13?15 GHz,the RMS amplitude error of phase-shifting is 1.07?1.46 dB,the RMS phase error of phase-shifting is 3?4.51°,the maximum attenuation range is 29.5-28.2 dB,the RMS amplitude error of attenuation is 0.81?1.42 dB,the RMS phase error of attenuation is 3.47°?4.8°,and the input ldB compression point at 14 GHz is-15.4dBm in the receive chain;In the frequency range of 13.2?15.1 GHz,the transmit chain gain is more than 5 dB.In the frequency range of 13?15 GHz,the RMS amplitude error of phase-shifting is 0.33?2.07 dB,the RMS phase error of phase-shifting is 3.4°?4.89°,the maximum attenuation range is 29.2?28 dB,the RMS amplitude error of attenuation is 1?1.67 dB,the RMS phase error of attenuation is 3.38°?6.46°,the input ldB compression point at 14 GHz frequency is 4.6 dBm,and the saturated output power is 13.6 dBm in the transmit chain.The corresponding attenuation and phase shifting functions are preliminarily realized,which provides a solid foundation for the subsequent design improvement.