Resistance To Irradiation 4k ¡Á 32bit Sram Research And Design

SRAM is the main product of very large scale integrated circuit, it has been widely used in highly fast speed systems due to its low power dissipation and high speed. As the developing of the the aeronautical and astronautical technology, SRAM is being more and more used in the control systems of spacecrafts and satellites. Because of the complicatedly radiant environment of the air space, besides the low power dissipation and fast speed, SRAM should have the ability of radiation-hardened.This thesis analysises the standard storage cell of SRAM based on the structrue of 6 transistors, then introduces the principle of single event effect of CMOS devices. This thesis design the storage cell of SRAM based on the structure of dual interlocked storage cell (DICE), who has four redundant nodes, to improve its ability of radiation-hardened. And the application of hierarchical divided bit-line and word-line (HDBWL) approach is used for reducing the power dissipation of SRAM, at the same time improving its working speed., because the structrue of the storage cell of SRAM is hard to change as it has been fixed. The arbitrated module is used to control the state of affairs of reading or writing the same storage cell of SRAM with double ports. And this design was finished with the technology of 130 nm CMOS.The tests of SRAM includes the function test, the analysis of power dissipation and the test of the ability of radiation-hardened. The mixed-mode simulation of NanoSim and building the test setting with Spectre has been used to test the function respectively. And NanoSim also can analysis the SRAM's power dissipation.Single event effects are the events that occur as a result of a high energy particle striking a semiconductor device. As the particle transverses through the device, it transfers energy to the material. Linear energy transfer (LET) is the term used to describe the capacity of a particle to deliver energy to the device.This thesis introduces the method of―transient pulse immission‖to simulate the ability of single-event-upset (SEU) hardened. Using double exponential, time dependent current pulses described by Massengill to simulate the single event effect. The double exponential, time dependent current pulse used had a rise time of 7 ps and fall time of 200 ps, the peak current was adjusted accordingly to vary the charge deposited on the striking node. The results of the test show that the critical charge of the storage cell of SRAM is about 300 fc , the Linear energy transfer threshold is 28.97 MeV ? cm 2mg. Compared to the 10 MeV ? cm 2mg, Which is the Linear energy transfer threshold of the standard storage cell of SRAM base on the structrue of 6 transistors, the ability of radiation-hardened has been improved evidently.