Radiation Hardened 1KB SRAM Design Based On SMIC 0.13?m Comercial Process

Space engineering is the general term for the activities of entering,exploring,developing and utilizing the extraterrestrial objects.It plays an active role in promoting scientific research,national defence scheme,national economy,culture and education,and is of great value and significance in realizing the great rejuvenation of the Chinese nation.With the remarkable development of science and technology,the breadth and profundity of the development of electronic engineering and computer science have also been further extended.In contemporary society,electronization and digitalization have created more possibilities for the development and become the normalcy of present age.In the 21 st century,electronic warfare and information warfare have become one of the main ways of modern military.However,with the development of space engineering digitalization,many problems have emerged.One of the most fatal problems is the radiation effect of the electronic system in outer space.In the strong radiation environment of outer space,the data security of the system is greatly challenged because of the semiconductor radiation effect.Under the strong radiation environment,the conventional circuits may have some problems,such as data error,high bit error rate,high power consumption,system crash and even burn down.Therefore,the radiation hardening technology of integrated circuit has become a hot spot of both microelectronics and aerospace engineering research.However,SRAM,just like other types of memory,also faces the problem of radiation effect.SRAM is extremely sensitive to cosmic radiation,which may lead to the degradation of electrical properties and even data damage under radiation environment,which directly imperil the data security of electronic system.Therefore,SRAM has always been receaving increasing attention in integrated circuit radiation hardening field.At storagre cell level,the advanced robustness of DICE(Dual-Interlock Cell Element)is introduced,and based on which,quad-differencial iput and dual-differencial output SRAM cell is proposed.This refinnned structure can remarkably improve the robustness of SRAM.At sequential logic level,DICE based quad-differencial master-slave flip-flop is proposed to improve the reliability.Besides,a new SEU tolerat flip-flop is proposed to decrease the number of trasistors used in sequential logic.At combianational logic level,combianational logic with redundant and error correction structure,CVSL(Cascode Voltage Switch Logic)and DICE logic are taken into comparation.In this paper,starting from the semiconductor irradiation effect,the advantages and disadvantages of several different type of circuit are briefly introduced from the perspective of combinational logic,sequential logic and storage cell in SRAM circuit.Besides,innovation is made in flip-flop design,storage cell design,system design and layout design.In the comprehensive utilization of DICE(Dual Interlock Cell Element)flip-flop,DICE memory unit,CVSL(Cascode Voltage Switch Logic)and DICE logic,a set of effective SRAM radiation hardening method is proposed,and the circuit,layout design and simulation of SRAM circuit are completed.