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For Spic Fluorescent Lamp Ballasts, High And Low Side Of The Totem Pole Structure Composite Power Tube

Posted on:2004-09-21Degree:MasterType:Thesis
Country:ChinaCandidate:M Z LiFull Text:PDF
GTID:2208360095960430Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
First, the state-of-the-art of SPIC is presented 。Smart Power IC(SPIC),which combines the power devices into low-voltage control circuits, drive circuits as well as protection circuits in one chip. SPIC can be widely used in various power electronics applications such as electronics ballasts, motor-drivers, power supplies, automotive electronics and so on. It was said that the trends of the developing of SPIC would introduce " A second electronic revolution". So the research on SPIC is moving on steadily.Second, the history of LDMOS is presented,and several kinds of LDMOS is displayed and discussed.Then OPT-VLD ,which was invented by Pro. CHEN,is described.Third, one of the key technology problems of the SPIC is as follows: Isolation technology, which includes: dielectric isolation, junction isolation and self-isolation.we interpret the novel isolation technology, and give the figues,results,advantages and disadvantages.Fourth, the novel devices which merge low-side high voltage power device with high-side high voltage one are designed. Both of the two devices are LDMOSs using OPT-VLD invented by Pro.CHEN.and the two LDMOSs have good isolation invented by Pro.CHEN.Fifth, MEDICI, as a tool, is introduced.In a word, for the merged power LDMOSs,VBR=400V.For the low side LDMOS, VBR=425V, Ron =0.1Ω.cm2,ton=30ns,toff=140ns.R=6Ω,for I=0.35A,P静态=0.74W.For the high side LDMOS, VBR=445V, Ron =0.4Ω.cm2,ton=30ns,toff=140ns.R=8Ω,for I=0.35A,P静态=0.98W.
Keywords/Search Tags:SPIC, LDMOS, OPT-VLD, merged, low-side high-voltage power device, high-side high-voltage power device, isolation
PDF Full Text Request
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