Monolithic Smart Power Ic Power Tube And Enable Circuit Design

Monolithic Smart Power IC (SPIC) has low cost, small volume, stable work, and many other advantages. Power devices are the key of the improvement of the SPIC. RESURF (REduced SURface Field) technology is one of the most important techniques for lateral power devices. RESURF technology can reduce the on-resistance of the lateral power devices in the condition of keeping the breakdown voltage of the lateral power devices.The main goal of this paper is to design a Monolithic SPIC. It should integrate high-voltage (600V), medium-voltage (40V),low-voltage (5V) devices in the same chip. The maximum power supply is 9W, and its work frequency is 132 KHz, its modulation mode is mixture PWM and PSM. It has over-current protection, over-thermal protection, under-voltage protection and wide working temperature.This paper researched a novel Triple-RESURF LDMOS. Theory analyse, numerical simulation and experiments indicated that Triple-RESURF LDMOS can reduce he on-resistance in the condition of keeping the breakdown voltage of the LDMOS. This paper presented a novel BCD flow include high-voltage (600V), medium-voltage (40V), low-voltage (5V) devices, and the solutions of the two challenges from the Triple-RESURF LDMOS. At last, author designed and optimized the layout of the Triple-RESURF LDMOS.This paper researched and designed the EN/UV block and the X2 produce block. Author designed and optimized the parameters of the two blocks with theory analysis, numerical simulation and experiments. At last, author designed and optimized the layout of the two blocks.