The Modeling And Simulation Of A Single Electron Transistor From Nanoelectronic Devices

Development of microelectronic technology more and more close to the limits of its technology, therefore it is the necessity to develop the new device technology. Nanoelectronic device is continuation of the microelectronic device:As a new generation electronic device, compared to the traditional microelectronic devices, nanoelectronic device has obvious advantages in the power, speed, etc, and has a bright future. Single electron devices, including Single-Electron transistor and Single-Electron memory, are the most representative of nanoelectronic devices, represent the development direction of the next generation of devices, and thus become a hot area of research.Firstly, we introduce the background of single-electron device the single-electron basic phenomenon, the orthodox theory. Secondly, on the foundation of the orthodox theory of single electron tunneling, the SPICE model of the single electron transistor are set up, and the characteristic analysis of the single-electron transistor is carried on. At last, The circuits of single electron inverter are accomplished by the SPICE model, and the accuracy of the SPICE model is also validated through the concrete circuit, the results indicate that the SPICE model has considerable accuracy and can be used in the simulation of the circuit.