Model Optimization And Experimental Fabrication Of Room Temperature Single Electron Transistors Based On The Ordered Mesoporous Thin Film

The single electron transistor is one type of nanoscale electronic devices based on quantum tunneling effect and coulomb blockade effect, where one or more coulomb islands are sandwiched between two tunnel junctions which connect respectively with the drain electrode and the source electrode, and capacitively coupled with one or more gate electrodes. It is one of the most promising candidates for the nanoscale electronic devices due to its ultra-small dimension and ultra-low power consumption. The room temperature operation and the controllability of device structures are the most important to expand the applications of the single electron transistors. This thesis presents a new structure of the single electron transistor based on the ordered mesoporous thin film, which explores a new way to solve the key issues mentioned above. Three main theoretical and technical innovations are achieved to realize the new device as follows:First, the semi-classical models for the ultra-small island and multi-island single electron transistors are optimized based on the characteristics of the quantum level spacing in the ultra-small coulomb islands and the tunneling structures of the coulomb island chains. An improved semi-classical model with empirical optimizations is proposed, which lays a theoretical foundation for the design and simulation of room temperature single electron transistors.Second, the techniques of 3-D hexagonal and 3-D cubic structures of gold nanoparticle arrays and sub-10nm nanotrench arrays fabrication with high quality and low cost are developed based on the ordered mesoporous thin film, and high ordered controllable coulomb island arrays, tunneling barriers and nanotrench arrays are fabricated, which lays a technical foundation for the fabrication of the room temperature single electron transistors and ordered nano-structures.Third, the structure of single electron transistor is designed, the corresponding fabrication process is developed and the electronic testbench is built for the nanoscale electronic device test. A new kind of room temperature single electron transistor based on the ordered mesoporous thin film is fabricated and tested. The results of the structure characterizations, the electronic tests, the parameter extractions and the model simulations are consistent with the prediction of the designed device features, which confirms the successful fabrication and the accuracy of the optimized model for the room temperature single electron transistors based on the ordered mesoporous thin film.