Monte Carlo Simulation Of Single-Electron Device

The thesis mainly simulated the behavavior of single-electron box,single-electron transistor and single-electron dynamic memory by means of Monte Carlo method based on oxthodox theory.The paper simulated the electronic characteristic of single-electron box and single-electron transistor.The Counlomb step effect of single-electron box is simulated.and find the result that the Counlomb step effect is correlation to the parameter 'a'which is directed to the total capacitance and temperature.Biger is the parameter,less obviously the Counlomb step phenomena. For single-electron transistor,the paper simulated the relation curve between I-V_g and I-V_b.It was found that the Counlomb blockade depends much on temperature When the temperature becomes higher,the Coulomb blockade range becomes narrower or even disappers.If the tunnel junction capacitance becomes larger,the amplitude of the I-V curve of single-electron transistor becomes smaller,but the period is unchanged.For multi-tunnel-junction type, symmetrical trapping type and the ring type single-electron dynamic memory.as the results shows that the circumstance temperature and the tunnel junction capacitance have more important effect than tunnel junction resistance and the junction number. Smaller the temperature and tunnel junction capacitance are, faster the storage time is.The storage time of the ring single-electron dynamic memory is larger than that of the symmetrical trapping type single-electron dynamic memory,but the storage time of the multi-tunnel-junction type single-electron dynamic memory is lower than that of the symmetrical trapping single-electron dynamic memory.which indicades that the device configuration greatly influence its performance.