Fabrication Of Nano-Structures And Study Of Si-Based Single Electron Transistor

The fabrication of the nano-structures and the study of nanoelectronic devices (single electron transistor-SET, single electron memory, etc.) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future. In this thesis, some items on fabrication of nano-structures and study of Si-based SET such as fabrication technique of nano-structures and application on SET, SET fabrication processes, characteristics testing, simulation of SET have been discussed. In brief, the following major creative results have been obtained:1. By studying and using conventional 1C process in combination with electron beam lithography(EBL), reactive ion etching(RIE) and lift-off process, several efficient results are produced: semiconductor and metal nano-structures are fabricated; the matching problem of photolithography and electron beam lithography is well solved; the process efficiency is improved; the process is offered for the controlled fabrication of nano-structures by repetitious process testing; several nano-structures such as Si quantum wires, Si quantum dots, double quantum dot structures and tri-wire metal gate are firstly fabricated by using EBL and RIE processes.2. In the first, the successfully fabricated Si-based SETs on p-type SIMOX substrate are based on the process in china. The technology process is also offered for the controlled fabrication of single SETs. The effects of the operation temperatures, gate voltages, drain-source voltages and magnetic field upon the characteristic of device are analyzed in detail. Coulomb blockade and single electron tunneling are observed in the devices.3. The high precision single electron devices testing system with precision temperature controller, electronic characteristic testing and high magnetic field has been established. This system provides a stable foundation to deeply understanding and further studying of nano-structural single electron devices.4. The model of the SET devices and circuits has been established. Characteristic simulation is performed by using SIMON and PSPICE. The relationship between characteristics and parameters such as capacity and resistance of the SET is analyzed, which provides a theoretical basis for optimal design and fabrication of devices.The project "Fabrication and Testing of Single Electron Transistor" supported by Hong Kong Research Grants Council has been completed.