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Improvement Of Electro Mechanical Single Electron Transistor Semi-classical Model And Investigation Of Its Transport Characteristics

Posted on:2008-09-18Degree:DoctorType:Dissertation
Country:ChinaCandidate:Y WangFull Text:PDF
GTID:1118360212476723Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Nano-electromechanical systems (NEMS) have strong interaction between mechanical degree of freedom and electronic degree of freedom in nanometer scales. They have advantage such as nano scales, high frequency, low response time, large quality factor and high sensitivity. Electromechanical single electron transistor (EMSET) achieves dynamic coupling between single electron tunneling and the island vibration. It not only belongs to one of most essential devices of NEMS, but also reveals the important physical mechanism in complex devices.In this doctorate thesis, based on the other efforts, semi-classical model of EMSET is improved and its transport characteristics are investigated. The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode. Based on this improved semi-classical model, first, the device that there are two vibrating islands between the drain electrode and the source electrode is investigated, and the semi-classical model of double-island EMSET is proposed; Second, the island can also vibrate between the gate electrode and the back-gate electrode, and semi-classical model of two-dimensional vibrating EMSET is proposed; Third, the electromechanical quantum dot device with energy spectrum is studied. The characteristics of EMSET are simulated by...
Keywords/Search Tags:electromechanical single electron transistor, negative differential resistance, threshold voltage, two-dimensional vibrating, electromechanical single electron circuit
PDF Full Text Request
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