The Circuit Model Of Single-Electron Devices

With the development of ULSI (ultra-large-scale integrated circuits), Semiconductor device feature size is getting smaller and smaller and Digital IC chip integration growing. The feature size of Semiconductor devices is gradually from micrometer down to nanometer. So the quantum effect has increased influence on devices. Traditional microelectronic technology will change in major fields, such as structure, processing, material, etc.Some new Quantum-electronic and nano-electronic devices such as single-electron devices, molecular electronic devices will gradually become a new hot study.Single-electron devices include single-electron transistors and single-electron memory. Single-electron transistors with an ultrasmall size, high speed, low power consumption and multi-functional characteristics is a promising alternative to replacing MOS device. Single-electron memory stores information through controlling a single or several electrons with very low power consumption and small size. It is an important direction in achieving high-density storage of information.Firstly the paper introduces the background about single-electron devices and the basic theory, analyses the structure and Principle in detail. Considering the quantum effect in Coulomb Island, the paper deduces the current-voltage relation of single-electron, find the Macro-model by equivalent circuit and calculate the current in approximate conditions. Secondly, the paper simulates the characteristic of single-electron transistor with MATLAB, and analyses the results. Basing on this, the paper put forward the lumped capacitance circuit model of Silicon Quantum-Dots Based Single-Electron Memory. Using this model, one can calculate numerically the drain currents of linear, saturation and subthreshold regions of device with/without charges stored on the floating dots. The results indicate that the read operation process is right in the high and low threshold states respectively. This confirms that single-electron devices with high integrated, low power consumption are excellent new solid electronic devices.