A SPICE Model For Single-Electron Transistor

Development of microelectronic technology more and more close to the limits of its technology, therefore it is the necessity to develop the new device technology. Nanoelectronic device is continuation of the microelectronic device; As a new generation electronic device, compared to the traditional microelectronic devices, nanoelectronic device has obvious advantages in the power, speed, etc, and has a bright future. Single electron devices, including Single-Electron transistor and Single-Electron memory, are the most representative of nanoelectronic devices, represent the development direction of the next generation of devices, and thus become a hot area of research.This paper is mainly about the basic question of single electron device, which is the characteristic analysis. We can analyze characteristic of the single-electron device from the simulation, the measurement, and the theory. The theory analysis ignores many actual situations, is too ideal; direct measurement needs the very high technological conditions and the harsh measurement environment, and is too difficult. Simulation method has become a more appropriate method. In the numerous simulation methods the single-electron transistor equivalent model became a concern in recent years. This paper has used the method; we propose the single-electron tunneling junctions SPICE model, then obtained the SPICE model for single-electron transistor SPICE model with the model. We conduct the characteristic simulation of the single-electron transistor, and the simulation results are analyzed.Firstly, we introduce the background of single-electron device, the single-electron basic phenomenon, the measurement conditions, the orthodox theory, the unorthodox theory and so on. Secondly, we propose a single-electron tunneling junction SPICE model, carried on the analysis and the explanation of it. Thirdly, we utilize the orthodox theory to carry on the characteristic analysis of the single-electron transistor. At last, we simulate the I-V characteristic with the SPICE model for single-electron transistor, and analyzed the simulation result, compare the analysis result of the orthodox theory, can obtain that the model is rationalities and scientific, has certain application value.