Electro-static discharge (ESD) is natural phenomenon in our life which is a disaster to IC. There is billion dollar cost of ESD damage in Electronic Industry. Therefore more and more attention are paid on ESD phenomenon, and more and more devices and circuit were developed to overcome ESD. At the same time, people are eager to find a new kind of ESD protection devices which is more efficient than others.In this theist, SITH, this new kind of devices is brought to ESD protection area. Based on numerical simulation, the major issue is as follows:l,creat a program for simulating ESD event, 2,calculate some parameters (voltage, current, carrier density, temperature, generation rate) for different structures which is important in ESD process. This theist obtains the following achievements by optimizing the device structure:1,the voltage and temperature distribution versus time under TLP test,2,the impact of some important structure parameters(spacing between gate and source) on ESD response.The research in this theist is all based on device physical, is reliable, which can be made important reference to new ESD protection devices design. |