Research And Manufacture Of Static Induction Devices

Static Induction Devices (SIDs) mainly include Bipolar-Mode Static Induction Transistor (BSIT), Static Induction Transistor (SIT) and Static Induction Thyristor (SITH). Being one kind of novel power devices, SIDs for high operating frequency and high power application has attracted many scientists' great attention and has gained significant developments, since SIDs have many excellent electrical performance: such as low distortion, low noise, good linearity, no second breakdown, negative temperature coefficient, high output power and so on. The work in the present thesis has been carried out combining a scientific research item titled "The research and manufacture of Static Induction Device", which is sponsored by Lanzhou Science and Technology Committee.We described the operational mechanism of SIT (SITH), the structure of SIT (SITH), I-V characteristic, the theory of the current transition, the formation of channel barrier and the key microfabrication technology of them. Based on this, we discussed and analyzed the regulation of constructional parameters, material parameters, and technological parameters. We also designed our layouts.Under the goal of getting good electrical property of SIT, Combining with our experience and problems, step by step we improved part of process after a great deal of experiments.We have made a lot of experiments, such as etching process, for getting devices with perfect I-V characteristics under high breakdown voltage V_gs/V_gk·By testing chip, there are great improvements in basic electrical property. All of these measurements prove our manufacture plan is correct and reasonable.Considering two carriers double injection effect, space charges limited effect, the varieties of carrier lifetime etc., we analyze the whole regions of SITH's I-V characteristics in the forward direction blocking state and give physical explanations and calculations theoretically.