Experimental Studies On Electromagnetic Pulse Effect Of Electrostatic Discharge For The Semiconductor Triode

Along with the rapid development of micro-electric technology, various kinds of micro-electronic device is more and more small, technology is finer and the integrity is higher. So the micro-electronic devices are more sensitive to the electromagnetic energy. Today the electromagnetic environment is complicated increasingly, it is extremely urgent to enhance the anti-electromagnetic ability of the micro-electronic device. The static discharge regards as a common near field harmful source. It can generate the high voltage, strong electric field and the instantaneous great current in discharge process. It can also form electromagnetic pulse which is generated by the strong electromagnetic radiation, and do great harm to various micro-electricity systems. Studying the interference and damage to the semiconductor triode of static discharge can establish a good foundation for the further studying that the influence of micro-electricity system which is produced by the other electromagnetic pulse source. It has a great significance. This paper analyzes the research circumstances and development trend of the electromagnetic pulse effect of static discharge from domestic to foreign. Analyzing the characteristic of static discharge electromagnetic pulse, static discharge model and simulative method of static discharge. Two kinds of silicon micro-wave low-noise triode, such as 3DG218 and 2SC3358 have carried on experiments of the electromagnetic pulse effect of the static discharge and got some initial conclusions.(1) The experiment follows that the triode's most sensitive position of static discharge electromagnetic pulse is the collector junction. The most sensitive parameters are the emitter junction's reverse cutoff current IEBO and the reverse breakdown voltage VBRCEO between collector and emitter. Hypo-sensitive parameter is the direct current magnification of common emitter hFE.(2) The experiment finds that the emitter junction's reverse cutoff current IEBO which is based on the small voltage (0.5V) suddenly goes up when the triode appears damage or at the time before it takes on disable. And the direct current magnification hFE which is based on the small current rapidly reduces before the triode takes on disable. It likely illuminates that the triode has already taken on potential damage.(3) There is only a very small current flow before the reverse voltage surpasses the breakdown voltage. The PN junction heats, resistance reduces and the current rapidly increase when the electric breakdown. It just because of current's hot spot accumulates and current concentrate. The PN junction can form fused channel and the triode destroyed. It says that the triode's damage mechanism belongs to the second thermal breakdown.(4) From the analyses of damage voltage and the energy, collector junction is more sensitive than emitter junction when the triode is injected by different width square wave pulse.(5) Not only did some research of the damage voltage, the most sensitive port and parameter but also taking some tests with damage power at the same time. And find the damage power's expression. By the way of carrying on the statistical distribution, find that the triode's damage energy value basically fits the normal distribution. The damage model of triode belongs to the short circuit and the damage cause is the second thermal breakdown.