Research On Equivalent Circuit Model Of SiC Thyristor Based On Pspice

Silicon carbide(SiC)is one of the third-generation semiconductor materials,with many advantages such as forbidden bandwidth,strong avalanche breakdown electric field,high thermal conductivity,high carrier drift rate,and stable chemical properties.Therefore,power semiconductor devices fabricated using SiC have superior performance and have attracted widespread attention.Among them,SiC thyristors have become the hotspot of researchers with the advantages of high withstand voltage and strong cocurrent capacity.With the deepening of research on SiC thyristors,the establishment of accurate SiC thyristor device models has become orne of the problems solved by the servant.In this paper,the 6500V/40A SiC thyristor produced by GeneSiC is studied.The equivalent circuit model of SiC thyristor based on Pspice is studied,The main research contents and results are as follows:Firstly,the structural characteristics and working principle of SiC thyristors are briefly introduced.According to the internal commutation process of the device,based on the equivalent circuit model of Si-based thyristor,the 2T-3R-3C equivalent circuit model of SiC thyristor is proposed.Secondly,the device structure of 6500V SiC thyristor is established,simulating its static and dynamic characteristics,and the main parameters of the top PNP transistor and the bottom NPN transistor of the SiC thyristor are respectively extracted for equivalent circuit modeling.Based on the Si-based equivalent circuit,the static equivalent circuit and dynamic equivalent circuit of Pspice-based SiC thyristor are established by using the composite model modeling method combined with the variable temperature parameter modeling method.The static characteristics of the device are represented by a resistive model and a transistor model;the dynamic characteristics of the device are embodied by a model of junction capacitance,Thirdly,the accuracy of the equivalent circuit simulation model of SiC thyristor 2T=3R-3C is analyzed.The simulation results of dynamic and static characteristics of SiC thyristor equivalent circu:it at different temperatures are compared with those in the data sheet.The results show that the average error of static simulation results and dynamic simulation results are controlled within 15%,which verifies the accuracy of the model.