Spic In Device Design, Model And Parameter Extraction

Device model is a bridge that connects circuit design with process and it is very important to circuit design. Power devices such as LDMOS have a lot of advantages such as high switch speed and good thermal stability. It promotes SPIC to achieve and develop that LDMOS can easy to integrate with other devices. Now, many researchers are engaged in the work of develop LDMOS model, but hitherto there isn't an omnipotent model can be applied to all LDMOS that have different structure. This project is supported by national 863 item"smart power integration tech technique research"(2002AA11Z1540). We have done the following work in this paper: 1. designing the key device of switching power supply management Integrated Circuit — a single crystal diffused LDMOS. 2. Extracting model parameters of low voltage MOS by using the software AURORA. 3. Testing MOS transistors including high voltage LDMOS and low voltage MOS after the process experiment, then analyze the results of test.During the design of the high voltage LDMOS and develop its model, we use 2D numerical simulator MEDICI to do the device simulation and optimizing design, then we get the structure parameter of the LDMOS. Also, we analyze on the LDMOS quasi-saturation mechanisms and the characteristic of quasi-drain. Then a sub-circuit model is shown based on the concept of macro model.During extracting the model parameters of MOS transistors, a parameter extraction software AURORA is used. First, we learn what's AURORA and how to use it, and then we illustrate how to extract model parameters and how to get satisfying results in details.A novel BiCMOS process is developed. The conventional epitaxial process is abandoned. In this process, low voltage circuit and high voltage power device is integrated on a single crystal substrate. The author illustrates the layout of some component circuits and the testing circuits. We test the characteristic of the circuits and single transistors after the process experiment, the test results indicate the BCD process is successful and the component circuits and LDMOS operate well.