Parameters Extraction And Sensitivity Analysis For Multi-Cell MOSFET Device Small-Signal Model

Wireless communication technology has been developed so fast,which has been used in almost everywhere in our life.The RFIC(Radio Frequency Integrated Circuit)development is also at a fast pace.The MOSFET(Metal-Oxide-Semiconductor Field-Effect-Transistor)plays an important role for its low power consumption,high integration,mature manufacturing process and high coupling ability with analog circuit.In the process of designing circuit,in order to shorten the R&D(Research and Development)duration and cut the cost,replacing the device with accurate model is an effective way.And it's necessary to use computer-aided software in designing circuits,the accuracy of device models embedded in the software has a large influence on the designing result.In this dissertation,the small signal equivalent circuit model and the corresponding extraction process are researched.The validation of model and extraction method is applied on the 90 nm MOSFETs.The developments of integrated circuits and semiconductor devices are reviewed here.Based on the current theory of models,the improved model and extraction method are proposed here.The main content of this paper includes:1)the process of MOSFET device modeling and extraction of small signal model parameters;2)an improved model of test short structure is proposed,the corresponding de-embedding method is also different from conventional ones.The approach is validated by the good agreement of measured and modeled S parameters in the frequency range of 1-40 GHz.The 4×0.6?m gatewidth(number of gate fingersxunit gatewidth)MOSFET device with 90nm gatelength consisting of 18 cells has been characterized using proposed method;3)after de-embedding,a multiple-cell model more close to real physical structure is proposed.The 8×0.6 ?m gatewidth(number of gate fingersxunit gatewidth)MOSFET device with 90 nm gatelength consisting of 12 cells has been characterized using proposed model;4)After the whole equivalent circuit model is obtained,the sensitivity of each intrinsic parameter is analyzed.Monte Carlo method is used to verify the accuracy of the sensitivity in simulation and test the stability of the equivalent circuit model.