Mos Device Model Parameter Extraction

Smart power integrated circuits (SPICs), which will cause the second technology revolution, are used more and more widely. The application fields include switching power supply, electronic ballast, motor drive, mobile electronic, display drive, etc.. In this paper, the SPIC mentioned here is used to the electronic ballast.Firstly, the research and development on SPICs are reviewed briefly, form which we get the aim of this design: the power integrated circuit comprises not only power devices, but also logic controlled devices.Secondly, according to the process which is used in this SPIC, the method of parameter extraction of low-voltage MOSFET is presented, with the help of device simulation and software AURORA. The extracted model parameters are used in the SPIC design, and would act as a reference after the process test parameters were get.Then, a power MOSFET model and the parameter extraction method for it are introduced, both of them are presented by Prof. Chen. Based on the method, the way to measure the resistance and the capacitance, both of which vary with the applied voltage, is discussed. And then it is provided that how to include the voltage-dependent resistance and capacitance into the device model library for schematic simulation.In appendix, several examples of shell program associated with software MEDICI in UNIX operation system are introduced. Device simulation and data processing may be more efficient with the help of shell program.