SOI CMOS Devices Modeling And Model Parameters Extraction

In this paper,various physical effect,model and model parameter of PD SOI CMOS device have been in-depth studied, and probed into modeling the TID effects on semiconductor devices. Thesis work and the results are as follows:1. According to the characteristics of partially depleted SOI MOS devices,design device test structure, test condition, extraction strategy and verification methods, to finally complete extraction of the applicable 0.5μm SOI CMOS SPICE model DC and AC parameters . Support for the construction of 0.5μm SOI CMOS process platform, and for the designing and manufacturing of anti-radiation IC provide more precise and improve the success rate of a radiation-hardened design.2. This paper choose the BTS-type NMOS and PMOS of 0.5μm SOI technology as device test structure, complete the test device and verify the circuit layout, after chip out, achieve a circular chip-level parametric testing with the probe station and Agilent4156C parameter test device, use MBP software for parameter extraction, and finally verify extracted model parameters with actual result.Thesis completed the 0.5μm SOI CMOS SPICE model parameter extraction and validation. Through a single inverter, 100 inverter chain, 101 ring oscillator circuit, 210 frequency circuit and a SRAM circuit to verify the extracted model parameters is effective and practical. Thesis completed the entire process of extracting the model parameters, provide a practical 0.5μm SOI CMOS SPICE model parameters and show the capability of extraction SOI SPICE device model parameters and AC parameters DC. The DC model parameter error within 3% ,completely meets the project objectives of 5%.Study the physical mechanism of the total ionizing dose radiation effects (TID) and the international latest results of TID model for the methods that can be applied to the current TID effects modeling and reinforcement design, and research a more precise model of the device radiation. As TID generally affect only the characteristics of the DC characteristics, we can re-extracting the model parameters based on the results of radiation tests, it's a simple solution to modify the parameters of the original model for TID effects. For chips that work in a specific environment which can be effectively estimated the radiation dose, the basic design of reliability problems can be solved with this method. Similarly, the accuracy of the model must be verified by the test data after irradiation test.