Dual-Band RF CMOS Low Noise Amplifier For WLAN Application

In recent years, the WLAN market shows a multi-standards co-existing situation. Therefore, market needs multi-band transceivers. Applying multi-transceivers for multi-bands became unsuitable as the cost is continuously going down due to the competition among manufactures. It is obvious that the wireless communication devices need to be compatible to all operation modes, which become an attractive trend. CMOS technology is an attractive solution due to the low cost, high level integration and high performance in terms of cutoff frequency.This thesis focuses on the dual-band low-noise amplifier, one of the critical parts of multi-band WLAN receivers, and implemented in RF CMOS technology.Characteristic works in the dissertation are summarized as follows:1) The performance of low noise amplifier determines the whole RP front-end. So the receiver architecture is introduced firstly, and the receiver gain plan is specified. The required performance for dual-band low noise amplifier is derived out.2) After discussing the model of high-frequency noise for MOSFET and cascade-LNA used in this thesis, the criteria of MOSFET noise-matching and power-matching is also derived out based on the power-limit optimization theory.3) On the foundation of above analysis, two kinds of dual-band low noise amplifier is designed based on TSMC 0.25μm RP CMOS process. The details of design procedure are described. Comparison is given at the same power dissipation.4) The RP layout design methodology in the design such as the parasitic effect of switch and pad is discussed. Two kinds of dual-band LNA layout is given. And the result of post-simulation is also given by Mentor Calibre.