Research Of RF Broadband LNA Based On SiGe BiCMOS Process

As the semiconductor process develops rapidly, it gradually becomes a new trend in development of RF microwave amplifier to use SiGe process technology for manufacturing MMIC amplifier, and it becomes to be a new research region and hotspot in RF whole wafer IC design. LNAs are one of the key components in wireless communication equipments, such as portable communication, blue-tooth system, satellite communication system, phase array radar system etc. Its performances such as noise figure, power gain, signal bandwidth and SFDR will directly have an effect on the whole RF system. So it has important significance to do the profound research and exploiture of LNA for RFIC (Radio Frequency Integrated Circuit) design and low cost, high performace wireless products.Focusing on the manufacturing process technology, low noise, high gain, wide-bandwidth and high dynamic range SFDR requirements of broadband low-noise amplifiers, and basing on making the analysis of the development history, status and trends of the world's research on RF broadband low noise amplifiers with a great deal of related references, silicon-germanium heterojunction bipolar transistor (SiGe HBT) noise performance, circuit topology design, circuit layout design, performance optimization and the test techniques of device are deeply researched and made a more systematic analysis and study in the paper, the parameter optimization methods also are demonstrated, which got the satisfying results. At last, a better performance, well worked LNA in all kinds of technical specifics is designed. There are mainly three sections described in this paper according to the research work.First, Based on the RFIC research hotspots recently, and the R&D state of the art of RF LNA in domestic and overseas, and the newest resources and correlative data, SiGe HBT device on high frequency, and DC and RF performance in detail were investigated.Second, the fundamental theory and knowledge, and the key technical specifications were researched in detail, such as noise figure, bandwidth and gain trade-off evaluation, impedance match and power linearity etc, two-port network noise figure optimization method is obtained. Based on the complete performance comparison about many Si bipolar LNA topologies, the broadband LNA topology is achieved.Third, the low-noise performance of SiGe HBT, SiGe process technology, circuit structure and parameter optimization, package parasitic effect and external circuit effect simulation and analysis, and the testing system of LNA die were investigated in detail. The research and innovation methods about LNA design were presented. The paper completed the design of a high-gain, broadband, low-noise MMIC amplifier, and brings forward to some improvement work in the future.