Sige Hbt Noise Model And Bicmos Lnas

Higher performance of Radio Frequency Integrated Circuit (RFIC) is needed to meet the requirements of the rapid development of wireless mobile communication technology. As the first active stage of RF front-end circuits, low noise amplifier (LNA) with improved low noise figure, gain, linearity and power is the main way to make the whole RF front-end circuits perfect. Based on the study of simplified SiGe HBT SPICE noise model, a novel 2.4GHz SiGe BiCMOS LNA is designed, which can be applied in RF Bluetooth system.Based on the structure theory of SiGe HBT, two-port network noise theory and SiGe HBT SPICE noise model, an analytical minimum noise factor of simplified SiGe HBT SPICE noise model is deduced. The results of comparison between hand calculation and measurement in different conditions show that the error is less than 5%, and the results prove the rationality of the proposed SiGe HBT noise model.A novel 2.4 GHz SiGe BiCMOS LNA circuit and layout are designed based on the proposed SiGe HBT noise model and the design of a novel BiFET input structure, impedance match, and bias circuit. In the condition of 2.0V supply and 2.4GHz frequency, the simulation results of the LNA, with 2.27dB noise figure, 11.5dB gain. -0.26dBm IIP3, 10.95dBm OIP3 and 6.1mW power in TSMC 0.35μm SiGe BiCMOS technology, show that the proposed LNA is promising in RF Bluetooth system application.