Monte Carlo Simulation Of Single-Electron Device

The thesis simulated the behavior of single-electron transistor, single-electron dynamic memory and single-electron adder by means of Monte Carlo method.The electric performance of the single-electron devices under the influence of such structural parameters as the tunnel junction capacitance and resistance,and the working parameters such as magnitude of voltage pulse and temperature have bene investigated.For single-electron transistor,it was found that the Coulomb blockade depends much on temperature. When the temperature becomes higher,the Coulomb blockade range becomes narrower or even disappears. If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.For multi-tunnel-junction type,symmetrical trapping type and the ring type single-electron dynamic memory, as the results shows that the storage time of the ring single-electron dynamic memory is two magnitudes larger than that of the symmetrical trapping type single-electron dynamic memory, but the storage time of the multi- tunnel-junction type single-electron dynamic memory is one magnitude lower than that of the symmetrical trapping single-electron dynamic memory,which indicates that the device configuration greatly influence its performance.For single-electron adder, when temperature becomes lower,the Coulomb staircase becomes more obvious. If the gate capacitance becomes larger, the Coulomb staircase becomes narrower. But the tunnel junction capacitance and resistance make little difference to Coulomb staircase.Besides,the thesis offered a new macro-model for single-electron devices. With this macro-model a single electron transistor can be treated as a classical electronic element and complex single electron circuits satisfying certain conditions could beanalyzed and simulated by SPICE, a popular software for simulating of large scale integrated circuits,thus saviny magnitudes of CPU time.