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The Production Of 64K PROM By BiCMOS

Posted on:2007-10-25Degree:MasterType:Thesis
Country:ChinaCandidate:L J ZhangFull Text:PDF
GTID:2178360182999951Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
This paper summarizes the development, categories and theory of the memorizers. With the investigation of the PROM elements, it detailed analyzes the structure, theory, and reliability. The advantages of the BiCMOS technics and technic process are discussed concretely. It introduces the choice of the fuse material, the structure and size, and the process. The encapsulation and test also are discussed.The design of the PROM adopts the fusing structure, since this structure is facility for process and is independently from the MOS parts. The PROM process uses the BiCMOS technology, so the work efficiency is improved and the consume is reduced.in the process, using Nicon photoetching improves the photoetch quality;using PECVD, LPCVD ameliorates the product's quality;using magnetic spattering to make fusing thin film;using ERC to etch;using SiO2 and Si3N4 as the passivation to improve the radiation protection. In design, using compound element as the part of discharging route;fusing maded on the medium;using double metal technology;adopting the bi-directional output to lessen the number of the pins and the area of the encapsulation. In the process of whole experimentation, we achieve the goal through accumulating the data.
Keywords/Search Tags:PROM, BiCMOS, fusing, CVD, LDD
PDF Full Text Request
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