Study On The Manufacture Technology Of Power Static Induction Devices

In order to manufacture power Static Induction Devices (SIDs) with excellent characteristic to meet the need of National economy, the key manufacture technologies of Static Induction Thyristor (SITH) was studied based on the analysis of its operational principle. The key manufacture technologies include selecting right material, designing the device structure, epitaxial growth of silicon, etching the gate of the device, forming the deep through and so on. In addition, we designed the new device structure, the new layout and the new flow of the Static Induction Transistor (SIT). Based on these research we found that dope phosphor on the silicon can solve the problem effectively that the N type silicon become the P type silicon during the epitaxial growth process, and that forming a deep through is necessary to improve the characteristic of the devices. In addition, we found that etching the gate and then etching the deep through can fabricate good devices easier than etching the deep through and then etching the gate. At last, we designed the new flow of SIT and fabricated good devices.