The Manufacture And Research On The Operational Properties Of Organic Static Induction Transistor

Nowadays, with the rapid development of information technology, the technology of large-scale integrated circuits and terminal displays have become the two most important pillars of technology in information society. Disadvantages of traditional Si-based semiconductors include, high investment costs, complicated manufacturing processes, not being suitable for use in flexible substrates and difficulties in large-scale production. Over the last few decades, a new low-cost method has been a popular alternative for the production of organic thin film transistors, which got the scientists and industrial people's attention after its rapid development. Production of the organic thin film transistors is much simpler than the production of the traditional Si-based semiconductors and therefore only costs 1%-10% of the price. Organic thin film transistors are also compatible with flexible substrates and satisfy the requirements for manufacturing low-end electronic products. The rapid development of organic transistors has been mainly due to the development of new types of organic semiconductor materials.This thesis is research on a new structure of the organic thin film transistor - Organic Static Induction Transistors (OSIT), which has a static induction transistor (SIT) of the vertical structure and CuPc (Copper Phthalocyanine) as the active layer.This paper shows that, the organic static induction transistor, whose structure is Cu/CuPc/Al/CuPc/Cu, is manufactured with the technology of vacuum evaporation and magnetron sputtering. Source and drain, which are both Cu films seperatly, have the Ohmic contact formation with copper phthalocyanine layer. The gate metal is Al, which has Schottky barrier interface with copper phthalocyanine. By the way of changing the voltage of gate and drain, the Schottky barrier height is controlled, which controls the quantity of barrier carrier, which finally controls the current in channel. In order to analyze the current-voltage (I-V) characteristics of OSIT and understand the essential of carrier injection and transport in organic electronic devices, the I-V data was matched with classical theory models. Through comparing the fitting curve with the actual curve, carrier injection and transport modes in OSIT under different bias voltage were further discussed. And it confirmed that the related theory of inorganic SIT was suitable to OSIT.