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Research On Digital Phase Shift And Low Noise Amplification Technology Based On 0.13?m SiGe BiCMOS

Posted on:2019-05-16Degree:MasterType:Thesis
Country:ChinaCandidate:F Y LiFull Text:PDF
GTID:2348330569987760Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
Phased array radar system not only has strong anti-jamming and fast wave speed forming ability,but also has advantages in channel capacity and signal-to-noise ratio compared with other radars,so it has quite high military strategic significance.In the phased array,phase shifters are used to scan the wave speed,and the low noise amplifiers are used to reduce the noise coefficient and increase the gain of the received link.Therefore,it is urgent to develop a miniaturized,light and high-performance phase shifter and low noise amplifier chip.What's more,SiGe BiCMOS technology not only has good high frequency performance,but also has low price and compatible with CMOS,so it has been developed rapidly.Co-simulation method with Cadence and HFSS is used to design two phase shifters and two low noise amplifiers based on Global Foundries 0.13?m SiGe BiCMOS 8xp process.What's more,some of them have been taped out to test their function.The specific contents are as follows:Using the nfetwrf that has good high frequency performance to design two six-bit digital phase shifters at Ka band,which are cascaded with six phase shifting units.The small phase shifting units of high and low pass type phase shifter adopt new structure:the inductance of the series resonant branch is divided into two small inductors,which are placed on both sides of the capacitor.By thie way,it is beneficial to the adjustment of the circuit and the symmetry of the whole.At the same time,the bit of internal phase shifter chips reported with the SiGe process is low,so this design can provide reference for the design of follow-up high bit phase shifter.In addition,the cascode structure and temperature compensation technique are used to design a low noise amplifier with good performance in K and Ka band.For the designed modules,the results are as follows:firstly,the simulation results of Ka band switching line type six bit digital phase shifter are additional attenuation is less thaną0.6dB,phase shift RMS error is less than 3.16°,what's more,the input and output return loss is better than 14.92dB.Secondly,the results of testing the high-low pass type digital phase shifter are:the additional attenuation is less thaną1dB,phase shift RMS error is less than 6.5°,and the input-output return loss is better than 9.5dB.Thirdly,the simulation results of Ka band low noise amplifier that is guaranteed to be stable are as follows,the low noise coefficient is better than 3.45dB,and the gain is as high as about 24d B.Finally,the testing results of K band low noise amplifier are as below:noise coefficient is 1.672.27dB,gain is 11.5912.38dB,and output P1dB is about 9dBm.
Keywords/Search Tags:6-bits digital phase shifter, SiGe BiCMOS, low noise amplifier, switch
PDF Full Text Request
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