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A fully integrated CMOS receiver

Posted on:2009-07-20Degree:Ph.DType:Dissertation
University:University of MichiganCandidate:Shi, DanFull Text:PDF
GTID:1448390002995089Subject:Engineering
Abstract/Summary:
The rapidly growing wireless communication market is creating an increasing demand for low-cost highly-integrated radio frequency (RF) communication systems. This dissertation focuses on techniques to enable fully-integrated, wireless receivers incorporating all passive components, including the antenna, and also incorporating baseband synchronization on-chip. Not only is the receiver small in size and requires very low power, but it also delivers synchronized demodulated data. This research targets applications such as implantable neuroprosthetic devices and environmental wireless sensors, which need short range, low data-rate wireless communications but a long lifetime. To achieve these goals, the super-regenerative architecture is used, since power consumption with this architecture is low due to the simplified receiver architecture.;This dissertation presents a 5GHz single chip receiver incorporating a compact on-chip 5 GHz slot antenna (50 times smaller than traditional dipole antennas) and a digital received data synchronization. A compact capacitively-loaded 5 GHz standing-wave resonator is used to improve the energy efficiency. An all-digital PLL timing scheme synchronizes the received data clock. A new type of low-power envelope detector is incorporated to increase the data rate and efficiency. The receiver achieves a data rate up to 1.2 Mb/s, dissipates 6.6 mW from a 1.5 V supply.;The novel on-chip capacitively-loaded, transmission-line-standing-wave resonator is employed instead of a conventional low-Q on-chip inductor. The simulated quality factor of the resonator is very high (35), and is verified by phase-noise measurements of a prototype 5GHz Voltage Control Oscillator (VCO) incorporating this resonator. The prototype VCO, implemented in 0.13 mum CMOS, dissipates 3 mW from a 1.2 V supply, and achieves a measured phase noise of -117 dBc/Hz at a 1 MHz offset.;In the on-chip antenna an efficient shielding technique is used to shield the antenna from the low-resistivity substrate underneath. Two standalone on-chip slot antenna prototypes were designed and fabricated in 0.13 mum CMOS. The 9 GHz prototype occupies a die area of only 0.3 mm2, has an active gain of -4.4 dBi and an efficiency of 9%. The second prototype occupies a die area of 0.47 mm2, and achieves a passive gain of approximately -17.0 dBi at 5 GHz.;Two fully integrated 5 GHz receiver prototypes have been designed using super-regenerative architecture in the IBM 0.13 mum CMOS process. The first prototype was fabricated and demonstrated. This receiver draws 6.6 mW, which corresponds to 5.5 nJ per bit at the date rate of 1.2 Mb/s, and occupies a die area of 2.4 mm2. The second prototype utilizes an inductorless LNA replacing the inductor-based LNA. This inductorless LNA eliminates the problem of electromagnetic signal interference by on-chip inductors in the inductor-based LNA, and greatly shrinks the system die area. The total die area is only 1.4 mm2. In simulations, same performance is achieved with similar power consumption as that of the first prototype.
Keywords/Search Tags:CMOS, Rate, Receiver, Prototype, Die area, Mm2, LNA, Wireless
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