| Smart Power IC(SPIC), which combines the power devices into low-voltage control circuits, drive circuits as well as protection circuits in one chip. SPIC can be widely used in various power electronics applications such as electronics ballasts, motor-drivers, power supplies, automotive electronics and so on. It was said that the trends of the developing of SPIC would introduce " A second electronic revolution". So the research on SPIC is moving on steadily.First, the state-of-the-art of SPIC is presented. The key technology problems of the SPIC are as follows:1 Isolation technology, which includes: dielectric isolation, junction isolation and self- isolation.2 The manufacture of lateral devices, which includes: RESURF-technique on LDMOS, LIGBT, LIBT, SINFET and so on.The manufacture of the technology mentioned above brings up that the cost of SPIC is too high to be widely used. In this thesis, the theory of OPVLD (Optimum Vary Lateral Doping) is used to reduce the cost in manufacture of SPIC. The improved fabrication process is used to design the SPIC in high effective electronics power converter.Then, the basic power converter circuit, the basic PWM theory, the power switching and the developing of power converter are introduced. Then the lateral devices in SPIC are introduced and the OPVLD is used in design in high voltage lateral devices. The author's main work in some high梫oltage power converter elements are presented, which can be summarized as follows:1. There is still no integrated high voltage over-voltage protect circuit in SPIC. A novel integrated high voltage detector is proposed by using FFLR. The FFLR is often used as a junction terminal technology in SPIC, so this design is not only an effective high voltage detector, but also needn't additional technology in normal process.2. Based on an applied APFC ballast circuit, a new method on integrated high voltage over-voltage protection is presented. The total design includes voltagedetector and control circuit. The key design is that high voltage detector uses the novel FFLR as the detector. The control circuit is a comparator in SPIC.3.The interface charge affects the voltage of the rings a lot. So the ion implant technology is used to adjust the surface field, with the field-stopping ring and the field plate added on every ring, these techniques improve the stability of the voltage detector with FFLR.4.The stability of the SIPOS is used as an integrated high voltage detector, which has almost no voltage change under the influence of interface charge. This SIPOS detector is accomplished throughout the design of layout, and can be used in over-voltage protection mentioned above.5. The power deliver has the problem on low power factor. A new APFC circuit of an applied ballast circuit SPIC is derived. The SPIC maintenances high power factor and decreases the bus voltage in about 200V. The key of the idea is that the pulse-width of the drive-pulse of the APFC switching is decreased. The method only needs to add a pin for SPIC, without any other components.The over voltage protection circuits and the new APFC circuits can be designed in one chip, and make the electronics ballast SPIC more effective, more cheap and more reliable.6. A novel LDMOS with buried layer named B-LDMOS is proposed. The structure of B-LDMOS only different from normal LDMOS is that the B-LDMOS has a buried layer under the drain. This buried layer can increase the breakdown voltage of the LDMOS almost without influence on the specific on-resistance, switching characteristics, forward drop voltage and so on. The simulation results prove the B-LDMOS can optimize the LDMOS.
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