Based Tanner And Sipos Passivated Power Transistor Terminal Cad Research And Applications

Due to the important position of termination design in power transistor design, the termination structure applied widely was studied, and its advantage and defect were compared. We develop proper terminal structure suitable to the film of SIPOS(semi-insulating poly silicon by experimental and theoretical), which is a special technology in our company. Then, we have obtaied an unified design rule.There are three stage experiments in the thesis. The various design patterns which designed with TANNER CAD are made on the same mask in every experiment so as to compare conveniently in the same process condition. Through online and finally tests, one of the new project has successfully resolved the triangle and double-line curve problems of breakdown voltage in product 4**2,blazing problem during high temperature test in product 4**8, and the parameter change problem of final product in high temperature storage for long time. A perfect termination structure which improves function and enhances reliability of the products is developed. The thesis also indicates the important influence of the ratio of"width/depth"in FLR(Field Limited Ring) design on the breakdown voltage Bvcbo, and shows the accordingly causes. The study also gives the optimal ratio by experiment, which will be a reference for further research.