Research On Transmission Characteristics Of Through Silicon Via (TSV) In 3D Integrated Circuit

With the introduction of Moore’s law in 1965,the number of transistors in integrated circuits showed exponential growth,which made the integration of integrated circuits increasing,and the speed and ability of processing information is getting stronger and stronger,which greatly promoted the rapid development of information industry,and also prompted the rapid development of electronics and computer technology,and the speed of updating and iteration of electronic products is getting faster and faster,and electronic products are developing towards miniaturization of size,structure complexity,functional diversification direction.However,the feature size of semiconductor process is increasing to the nanometer level,which is already in the same order of magnitude as the Si atomic radius of 0.117 nm.It has become very difficult to continue to improve the integration by reducing the size,which has prompted people to shift the target to the packaging angle to solve the integration problem.Through Silicon Via(TSV)interconnect technology is an emerging technology compared to lead bonding and chip flip-flop,TSV technology can reduce the length of interconnect lines in a stack of chips,reduce the size and weight of the package,and increase the package density.Therefore,this thesis focuses on the transmission characteristics of TSV signal channels.In this thesis,we perform HFSS frequency domain simulation for four structures of TSV,analyze the advantages and disadvantages of different structures,and compare the transmission characteristics of each structure.Based on this study,we propose a new structure-coaxial ring taper TSV,which has the advantages of various structures,and then extract the parasitic parameters of coaxial ring taper TSV,and verify the correctness of the parasitic parameters by Q3 D simulation.Finally,the equivalent circuit of the coaxial ring taper TSV is established.On the basis of verifying the correctness of the empirical formula for the extraction of parasitic parameters of the coaxial ring taper TSV,the single-variable method is used to further analyze the specific effects of each physical structure parameter of the coaxial ring taper TSV,including the thickness of the inner and outer ring filling media,the thickness of the inner and outer ring metal,the thickness of the isolation layer media,the height of the TSV,and the inclination angle of the TSV sidewall,on the transmission characteristics by HFSS simulation,and the optimized structure parameter model and compared with the previous structure.In 0-40 GHz,the optimized return loss is below-38 d B overall,which is a significant improvement compared to-18 d B before optimization,and the return loss is reduced by almost20 d B at each signal frequency above 10 GHz.In 0-40 GHz,the optimized insertion loss is above-0.006 d B overall,which is a significant improvement compared to-0.09 d B before optimization.By comparing the S-parameters of the coaxial ring taper TSV structure before and after the optimization,the transmission performance of the optimized structure is obviously improved,and the optimized structure is more favorable to the signal transmission.