Study On Preparation And Performance Of Binary Metal Oxide Memristor

With the development of information technology revolution,especially the rise of artificial intelligence,the demand for mass data processing has burst out.However,as the threads of integrated circuits approach physical limits,improving computer performance in traditional architectures becomes more and more difficult.The sharp contradiction between the rapid increase in demand and the slow increase in arithmetic has made memristors a hot spot for research once again.Through investigation and research,memristors have great potential in data storage,logical operation and neural network.Among them,binary metal oxide based memristors have become the focus of researchers because of their simple two-end structure,good process compatibility and unique resistance characteristics.In this paper,HfO2 and WOx-based memristors in binary metal oxides are selected for preparation,testing and analysis.First,the working principle,material system and key characteristics of the memristor are introduced.Then,the Al\TiN\HfO2\W memristor was prepared by magnetron sputtering combined with atomic layer deposition,and its I-V,Forming,switching ratio,fatigue resistance and retention characteristics were tested.To optimize the high operating voltage of the device,the Hf transition layer was introduced,and the preparation and test of the Al\TiN\Hf\HfO2\W memristor were completed.Next,in order to further improve the memory performance of the memristor,a Cu\WOx\W memristor was prepared by magnetron sputtering process and the relevant tests were completed.Ti\WOx\W memristors were prepared by magnetron sputtering to study the biomimetic properties of synapses of memristors.The I-V,LTP,erase and high frequency I-V characteristics were tested.Finally,LTSPICE simulation is performed on the memristor,and the simulation experiment of synaptic memristor is completed.In this study,it is found that the memory with Al\TiN\Hf\HfO₂\W structure can reduce the operating voltage of the memory more effectively than that with Al\TiN\HfO₂\W structure,but it also brings about the problem of high and low resistance state.Compared with Al\TiN\Hf\HfO₂\W,the Cu\WOx\W memory has an improved storage performance,which makes it have a great application prospects in information storage.The I-V characteristic curve of Ti\WOx\W memristor changes slowly and shows a corresponding trend in LTP test.It has the possibility of synaptic biomimetic,but the repeatability of this experiment is general and needs further study.In the LTSPICE simulation,it is found that the simulation results of the memristor are similar to the test curves of the actual device,which to some extent implements the mutual verification of the memristor resistance principle,circuit simulation and the test results of the actual device.However,since the simulation model is only an ideal linear device,resulting in some differences with the actual performance of the device,the model still needs to be further optimized.