Fabrication Of CH₃NH₃PbI_3-xBr_x Memristive Devices And The Simulation Of Synaptic Function

Memristor is a new electronic component whose resistance changes with the amount of charge flowing through it.Its structure and working mechanism are similar to human brain synapses,so it is regarded as an ideal electronic component for artificial synapses.The dielectric layer material of memristor is the basis and key to determine the performance and function of the device.Organic-inorganic hybrid perovskites(OIHPs)have the properties of electro induced ion migration and are one of the ideal materials for memristor.OIHP film quality and ion migration activation energy are the key factors to determine the performance and function of memristor devices.In this paper,Br doped CH₃NH₃PbI₃ thin film was used as the resistance medium layer to construct memristor device.The research work was carried out on the optimization of the film quality and the regulation of iodide ion migration and activation energy,and a memristor device with stable resistance characteristics was obtained,which realized the effective regulation of synaptic bionic function.The specific research contents are as follows:1.Optimize film quality:three different preparation methods were compared to optimize the quality of CH₃NH₃PbI₃ film and obtain smooth and continuous film.On this basis,a memristor device with Au/CH₃NH₃PbI₃/FTO structure was fabricated.The influence of different preparation methods on the resistance stability of memristor devices was studied.The components with the best resistance characteristics are obtained.The effects of the doping amount of Br on the microstructure and elemental composition of CH₃NH₃PbI_3-xBr_xthin films,such as grain size,doping form and lattice constant,were studied.2.Synaptic simulation studies:Based on the Arrhenius equation,the effect of Br doping on the activation energy of ion migration in thin films was studied by using the pulsed voltage excitation method.The results show that Br doping can effectively reduce the activation energy of ion migration in the material.Abstract:Based on Au/CH₃NH₃PbI_3-xBr_x/FTO devices,the modulation of Br doping on various synaptic biomimetic functions of memristors(excitatory postsynaptic current,paired-pulse facilitation and spik-time dependent plasticity)was studied,and the synaptic biomimetic functions of memristors were regulated.To sum up,CH₃NH₃PbI_3-xBr_x thin film was designed and prepared in this paper as the resistance medium layer to construct memristor device,which realized the optimization of film quality and effective regulation of iodide ion migration and activation,developed a memristor device with stable resistance characteristics,and realized the effective regulation of synaptic biomimetic function of the device.This paper has certain reference significance for the development of OIHPS memristor.