Research On The Integrated Fabrication Process And Characteristics Of ZnO Memristor Based On MEMS Technology

As flash memory gradually reached its physical limit,memristor has been proposed as an excellent alternative.As the memristor unit has been continuously researched,it could be further applied in practice.However,the separated memristor unit could not realize functions such as storage and the integrated production of memristors was needed.Therefore,the ZnO integrated memristor was designed and made in this paper.By summarizing domestic and foreign literature,this article summarizes the resistance switching mechanism and conduction mechanism of ZnO memristors.The ZnO memristor unit was prepared by magnetron sputtering method and mask process and the ZnO films were characterized and the effects of Li doping,thickness of resistive switching layer,annealing temperature and ambient temperature on the characteristics of the memristor were studied.Tested on the built memristor test system to get the optimal process conditions.This article designed an integrated memristor structure and on this basis,used L-edit software to design the layout.In this paper,the ZnO integrated memristor was fabricated based on MEMS technology and the package was completed on the PCB by technology of inner lead pressure welding.The experimental results showed that at room temperature,when the Li doping concentration was 5 wt%,the resistance switching layer thickness of the device was 198nm and the annealing temperature was 200?,the memristor unit had better resistance switching characteristics and its limiting current was 1×10^-5 A.The set and reset voltage were within±1.0 V,the resistance switch ratio of 10³ can be maintained within 4×10³ s for the longest,the durability was 10³,and resistance switching could be performed at the ambient temperature of 20 to 80?.Compared with the ZnO memristor unit,the ZnO integrated memristor had smallest set and reset voltage(3.0 V and-2.0 V)and smallest compliance current(4×10^-3 A)but it could maintain resistance on-off ratio of 10³ within10⁴ s.In addition,pulse resistance switching could be performed,and resistance switching could be successfully performed at 25?85?.The results showed that this article has realized the integrated production of ZnO memristors,which was beneficial to the further practical application of ZnO memristors.