Design Of Silicon-based D-band Power Amplifier

In recent years,Terahertz has become a research hotspot and its significance is recognized by the academic community.As one of the"atmospheric windows",the transmission attenuation of signal at 140GHz is small,so it has great application potential.The Millimeter-wave power amplifier,as an important component of the RF front-end,can achieve a large output power.Therefore,a D band power amplifier has been designed in this dissertation,aiming for large output power and a wide bandwidth while operating at 65%of the f _T.Firstly,the current research progress of D-band power amplifier is investigated in this dissertation,and the difficulties in the design of D-band power amplifier are introduced.Secondly,the related concepts of power amplifier are described,and the circuit topology of various power amplifiers are analyzed.Finally,the schematic design and layout design of the power amplifier are completed,and the chip has been tested.A three-stage cascaded,four-way D-band single-ended power amplifier in a 130nm Si Ge Bi CMOS process is designed and simulated.An input signal is divdied into two signals and sent to two-way power amplifiers,then it is divided and sent to four-way power amplifiers.Finally,T-junctions are used to realize the power combination and division.In this dissertation,the circuit schematic is designed,and the pre-simulation and layout designing of the circuit are completed.The EM simulations of passive components such as transmission lines,capacitors and the RC parasitic parameters of transistors are carried out by using ADS Momentum.The circuit design and optimization are completed.Finally,the co-simulation results show that the PA has a saturation out power of 10d Bm at 145GHz.The small signal gain is15d B and the 3d B bandwidth is 15GHz with a supply voltage of 3V.The peak power added efficiency(PAE)is 3%in D-band.The chip size is 0.71mm~2(0.36mm~2 without pads).