Design Of 26.5-40GHz Silicon-based Power Amplifier

With the development of wireless communication technology,people have higher and higher requirements on communication speed.Millimeter wave band has rich spectrum resources and strong anti-interference ability,which has become a hot research topic of highspeed communication technology.Traditional millimeter wave circuits are monolithic microwave integrated circuits(MMIC)using III-V technology,which have low integration and high cost.With the progress of silicon-based technology,the III-V technology has been gradually replaced by silicon-based technology in millimeter wave circuits.Power amplifier(PA)is the key component of millimeter wave communication system and has important influence on the whole system performance.Therefore millimeter wave power amplifier using silicon-based technology is of great theoretical significance and practical value.In this thesis,two Ka-band power amplifiers are designed based on 0.13?m SiGe BiCMOS technology.The first is a broadband power amplifier covering the entire Ka-band,and the second is a narrowband power amplifier operating at 40 GHz.Due to the high power and wideband characteristics of stacked power amplifiers,a stacked structure is adopted as the basic structure of the power amplifier.The first power amplifier is a single-stage,triple-stacked amplifier that uses multi-order LC networks for wideband input and output matching.To further increase the output power,two-way Wilkinson power splitters are used for power distribution and combination.EM simulation results show that from 26.5 to 40 GHz,the saturated output power,efficiency and output 1-dB compressed power of unit circuit are greater than 21.5dBm,22.7% and 17.5dBm,respectively.The power-combined PA has a gain over 15.9dB with saturated output power greater than 24 dBm.The input and output reflection coefficients are both less than-10.2dB.The second power amplifier is a two-stage amplifier whose driver stage is a common emitter structure and output stage is a double-stacked structure.The LC networks are used for input,inter-stage and output matching,and adaptive bias circuits are added.Similarly,power distribution and combination are performed using two-way Wilkinson power splitters.EM simulation results show that this power amplifier has a gain of 23.8dB with saturated output power of 23.6dBm at 40 GHz.The power amplifiers designed in this thesis meet the requirements of the target.They can be used in satellite communication and phased array radar.