Circuit Level Modeling And NAND Circuit Simulation Of POM Flash

With the development of flash memory technology for several decades,the size of flash memory cell has been obviously scaled,and the requirements for memory performance are increasingly high.The establishment of corresponding device model is also faced with important challenges.The establishment of corresponding device models is also facing important challenges.POM flash,as a new type of flash memory device,uses POM molecule as the floating gate of flash memory cell to replace the traditional silicon floating gate,which makes the flash memory cell can be further scaled in the nanometer range,which is of great significance to the development of flash memory industry.Parameter extraction,circuit level modeling of device model and corresponding circuit simulation research are essential parts of device research process.The extraction method of model parameters and circuit level modeling method will directly determine the accuracy of device model.Only accurate circuit level model of device can correctly explore the circuit characteristics of device.In this paper,based on the industry standard model BSIM4,combined with genetic algorithm and particle swarm optimization to extract and optimize the model parameters,and then establish the circuit level model of POM molecular flash,and apply them to the NAND circuit to study the circuit performance.The main contents include:Firstly,the method of extracting the model parameters of POM flash is preliminarily verified.Some parameters in BSIM4 were selected as fitting parameters,and the selected parameters were extracted by using genetic algorithm and particle swarm optimization algorithm respectively.The extraction results of the model parameters can well fit the corresponding POM flash physical standard data,and the extraction error of the two optimization algorithms is less than 3%.The introduction of intelligent optimization algorithm and the successful extraction of model parameters verify the feasibility of the extraction method,which will actively guide the modeling work of the device model in the future.Then,in order to facilitate the circuit level modeling process,the program framework of automatic extraction of POM flash compact model is built,and the appropriate reference strategy is put forward.The three states of POM flash compact model are successfully extracted.In device level circuit modeling process,the parameters in the model need to extract more and more,the accuracy of compact model is higher,the,the data to be processed is huge,and extracting process is very complicated,therefore,by building a program framework for automatically extracting the compact model,combining intelligent optimization algorithm and model extraction process,will greatly improve the extraction efficiency of the model.For different devices,a proper reference strategy can ensure the successful extraction of device models.The circuit level modeling of POM molecular flash memory device is successfully completed by using the program framework and the reference strategy,and the model extraction error is all within 5%.In addition,the automatic extraction model program framework established in this paper will also help to extract the POM flash compact model with statistical variation,and will also help to extract the model parameters of other devices.The proposed reference strategy also has important reference significance for device model extraction.Finally,in order to explore the circuit characteristics of POM flash,the extracted POM flash compact models are successfully applied to NAND flash memory circuit as a flash memory cell for circuit read operation.The research work in this paper will actively guide the circuit design of POM molecular flash memory devices,and provide help for the practical application and production of POM molecular flash memory devices.