A Study On X-ray Radiation Effect On The SSD Flash Memory Storage

From the 60th of last century, people found that the radiation in the universe has big impact on the semiconductor device. It will make the device un-functional and induce fateful effect to the satellite. In the following years, many scientists deeply studied the mechanism of the radiation on the semiconductor and gave much proposal and advice on the hardness plans on the radiation. But most of the studies mainly focus on the MOSEFT.With the development of EPROM, EEPROM, DDR and Flash memory, the radiation effect on these products were also acknowledged and studied continually.This paper is written base one the finding during Flash memory assembly and test. When doing the assembly and test, it was found that that after some time x-ray’s radiation there is charge loss in the floating gate which induced the threshold voltage change. The latest 24nm SSD Flash memories were chosen to do the further study. This paper firstly introduces the structure of the flash memory and the basic function of the read/write/erase. And then there are detail explains for the hardware and software test conditions. The plan for the experiment and analysis method was also raised up. With the study several things were confirmed:the different DOS on different data pattern, and the impact of temperate, the different impact on different dies, the difference on different driver with same DOS, and last re-erase and rewrite the data with different cycling to confirm the data accuracy and reliability of the flash memory.Consulting the studying on the radiation effect on EPROM and MOSEFT of previous, it summarized the mechanism of the radiation on the Flash memory. And base on the experiment data, some suggestions were raised up to control the X-ray usage during the production.